Download the pdf version of the final programme
The GE 2013 PhD school is organized in a technical and non-technical part. The technical part of the school is devoted to
Advanced devices and device-circuit interactions in nano-electronics
. In fact, as technology has continued to scale aggressively, the need for tighter interactions between design and technology has become extremely apparent. At the same time, a paradigm shift is taking place. CMOS evolution is not any more constrained along the "More Moore" path (providing more computing performance at lower cost) but, thanks to a number of innovations, it is expanding in the "More than Moore" and "Beyond Moore" domains where adding functionality to standard CMOS is the keyword.
Consistently, the objective of the technical part of the school is on the one hand to give a perspective view on new device technologies, CMOS technology boosters, and how they impact fundamental performance figures of merit, as well as device reproducibility, reliability etc. On the other hand, we aim to help the students to bridge the knowledge gap between the electron device community and the circuit design community by addressing topics such as device variability, reliability, characterization and parameter extraction.
Through a balanced mix of lectures from experts in the field we will:
1) discuss recent CMOS technology innovations and their consequences for design;
2) describe possible future developments of CMOS technology and new device concepts to enhance CMOS performance;
3) illustrate a selected set of "More than Moore" and "Beyond Moore" devices of potential interest for new electronics applications beyond computation and memorization.
The second part of the PhD school addresses a limited number of non-technical, cross-disciplinary, topics to help the students in adding strength and value to the PhD
and reinforcing their ability to take full benefit of their higher education degree. Consistently, we will present lectures and talks illustrating so called soft-skills such as, for instance: how to evaluate the impact of research and how it has been possible to start a successful company based on research ideas developed during the PhD.
The school workload is quantified in 4 Credits. Students attending the school will receive an individual attendance certificate. Upon request, a 30 minutes multiple Q&A test will be organized to certify the acquisition of the credits.
McGraw Hill education will award the students most active at the Q&A sessions with books on electronics from the italian and international catalog.
The "eduroam" wireless network will be available at the PhD school premises.
Eduroam credentials are issued by the home institution and are portable to any other institution providing the "eduroam" service. Students interested in having access to the internet during the school days should ask for "eduroam" credentials to the network managers of their home institution.
To optimize the organization we kindly ask a not-binding pre-registration.
Please follow the pre-registration link
State of the art and future perspectives of More Moore devices, Monday June 17, morning session
Pierpaolo Palestri, University of Udine, Italy
Boosting CMOS technology toward its ultimate scaling limits
Elisa Vianello, CEA-LETI, Grenoble, France
Resistive switching devices for future memory applications
Francesco Driussi, University of Udine, Italy
FLASH memory devices for gigascale non-volatile storage
More than Moore and Beyond Moore devices and applications, Monday June 17, afternoon session
Heike Riel, IBM Research, Zurich, Switzerland
Steep slope switches for ultra-low power electronics
Thomas Zimmer, IMS - University of Bordeaux, France
Graphene devices for More than Moore applications
Social dinner of the PhD school
Bridging the gap from device technology to circuit design, Tuesday June 18, morning session
H. P. Tuinhout, NXP Semiconductors, Eindhoven, The Netherlands
Matching and variability characterization for mixed-signal technologies
Federico Faccio, CERN, Geneva, Switzerland
Design of radiation tolerant ASICs in commercial CMOS technologies
Benno Ankele, Infineon Technologies, Villach, Austria
SPICE device modeling and parameter extraction for design in a multifab environment
Characterization and Modeling for advanced devices, Tuesday June 18, afternoon session
Fabrizio Bonani, Politecnico di Torino, Italy
Modelling approaches to nano-device variability simulation
Felice Crupi, University of Calabria, Italy
Electrical Characterization, Reliability and Early Assessment of Advanced CMOS Technologies
Adding strength and value to your PhD, Wednesday June 19, morning session
Gianni Medoro, Silicon Biosystems, Italy
From your PhD to your own company: how we did it
Sara Guttilla, University of Udine, Italy
Finding your way toward funding your research
Gianluca Setti, University of Ferrara, Italy
Evaluating Impact of Research: What Bibliometric Indicators Are Useful for?
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With the patronage of